SI4435DY
Manufacturer:
On Semiconductor
Mfr.Part #:
SI4435DY
Datasheet:
Description:
MOSFETs SO-8 SMD/SMT P-Channel number of channels:1 2.5 W -30 V Continuous Drain Current (ID):8.8 A 24 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -30 V |
| Length | 4.9 mm |
| Width | 3.9 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 20 MΩ |
| Height | 1.57 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.13 g |
| Number of Elements | 1 |
| Current Rating | -8.8 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | -1.7 V |
| Number of Channels | 1 |
| Input capacitance | 1.604 nF |
| Continuous Drain Current (ID) | 8.8 A |
| Rds On Max | 20 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 16 ns |
| Turn-Off Delay Time | 42 ns |
| Element Configuration | Single |
| Rise Time | 13.5 ns |
| Dual Supply Voltage | -30 V |
| Gate Charge | 24 nC |
| Drain to Source Resistance | 20 mΩ |
| Nominal Vgs | -1.7 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 3 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 2780
Distributors
pcbx
pcbxUnit Price$0.84467
Ext.Price$0.84467
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.84467 | $0.84467 |
| 10 | $0.57793 | $5.77930 |
| 25 | $0.51090 | $12.77250 |
| 50 | $0.45164 | $22.58200 |
| 100 | $0.39925 | $39.92500 |
| 300 | $0.35633 | $106.89900 |
| 500 | $0.31803 | $159.01500 |
| 1000 | $0.29067 | $290.67000 |